Observation of simultaneous Stokes and anti-Stokes emission in a silicon Raman laser

IEICE Electronics Express

Ozdal Boyraz¹  Dimitri Dimitropoulos¹  Bahram Jalali¹ 

[1] Optoelectronic Circuits and Systems Laboratory University of California

关键词: Waveguides;    semiconductor lasers;    silicon photonics;    Raman;   

DOI  :  10.1587/elex.1.435

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(26)We demonstrate a silicon Raman laser and report observation of simultaneous lasing at 1675nm and parametric Raman emission at 1540nm. The laser is pumped with 1540nm pulses and has a threshold at 9W peak pulse power.

【 授权许可】

Unknown