Highly-integrable K-band power dividers based on digital CMOS technology

IEICE Electronics Express

Sanggeun Jeon²  Sanggu Park²  Jinho Jeong¹ 

[1] Department of Electronic Engineering, Sogang University;School of Electrical Engineering, Korea University

关键词: power divider;    digital CMOS process;    Wilkinson divider;    dummy metal fills;   

DOI  :  10.1587/elex.8.114

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-µm digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.

【 授权许可】

Unknown