IEICE Electronics Express | |
High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates | |
N. Saito1  K. Kubota1  S. Saravanan1  N. Dharmarasu1  P. O. Vaccaro1  J. M. Zanardi Ocampo1  | |
[1] Department of Photonics, ATR Wave Engineering Laboratories | |
关键词: Light-emitting diodes; lateral p-n junctions; gallium compounds; high-density LED arrays; patterned-substrates; | |
DOI : 10.1587/elex.1.86 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(10)We report the high-density light-emitting diode (LED) array using a lateral p-n junction. AlxGa1-xAs lateral p-n junctions were formed on a semi-insulating GaAs (311)A patterned substrate using the amphoteric nature of silicon that behaves as p- and n-type dopant. For the first time, 2400 dots-per-inch (dpi) LED arrays were fabricated using the lateral junction. Electroluminescence spectrum shows a single peak at a wavelength of 813nm with an FWHM of 56nm at room temperature. The light output power was measured as a function of forward injection current. The high-density LED array has potential application in LED printers and displays.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300341527ZK.pdf | 465KB | download |