High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates

IEICE Electronics Express

N. Saito¹  K. Kubota¹  S. Saravanan¹  N. Dharmarasu¹  P. O. Vaccaro¹  J. M. Zanardi Ocampo¹ 

[1] Department of Photonics, ATR Wave Engineering Laboratories

关键词: Light-emitting diodes;    lateral p-n junctions;    gallium compounds;    high-density LED arrays;    patterned-substrates;   

DOI  :  10.1587/elex.1.86

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(10)We report the high-density light-emitting diode (LED) array using a lateral p-n junction. AlxGa1-xAs lateral p-n junctions were formed on a semi-insulating GaAs (311)A patterned substrate using the amphoteric nature of silicon that behaves as p- and n-type dopant. For the first time, 2400 dots-per-inch (dpi) LED arrays were fabricated using the lateral junction. Electroluminescence spectrum shows a single peak at a wavelength of 813nm with an FWHM of 56nm at room temperature. The light output power was measured as a function of forward injection current. The high-density LED array has potential application in LED printers and displays.

【 授权许可】

Unknown