3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE

IEICE Electronics Express

Oguzhan Kizilbey³  Osman Palamutçuogullari¹  Siddik Binboga Yarman² 

[1] Department of Electrical-Electronics Engineering of Istanbul Technical University;Department of Electrical-Electronics Engineering of Istanbul University;The Scientific and Technological Research Council of Turkey

关键词: balanced power amplifier;    harmonic powers;    GaN HEMT;   

DOI  :  10.1587/elex.10.20130104

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20W (43dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.

【 授权许可】

Unknown