IEICE Electronics Express | |
Low-cost area-efficient low-dropout regulators using MOSFET capacitors | |
Hamed Aminzadeh1  Khalil Mafinezhad1  Reza Lotfi1  | |
[1] Department of Electrical Engineering., Ferdowsi University of Mashhad | |
关键词: area efficiency; depletion-mode MOS capacitors; ESR; frequency compensation; LDO; linear regulators; low-cost; | |
DOI : 10.1587/elex.5.610 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(7)Cited-By(2)Traditional design of low-dropout regulators offers the use of metal-insulator-metal (MIM) compensation capacitors to avoid instability in the absence of output capacitance with equivalent series resistance (ESR). In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively varied according to the value of load current. This idea has been applied to stabilize a 1.2V, 100mA low-dropout regulator in an industrial 0.18µm CMOS n-well process. Using the proposed technique, the regulator meets stability with a small 100pF MOSFET output capacitor and no ESR.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300273676ZK.pdf | 184KB | download |