IEICE Electronics Express | |
A 1.2V high conversion gain mixer with reused gm stage in 65nm CMOS | |
Xincun Ji1  Chao Chen1  Jianhui Wu1  | |
[1] National ASIC research centre, Southeast University | |
关键词: RF; mixer; reusing; low power; | |
DOI : 10.1587/elex.10.20130279 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(7)A 1.2V high conversion gain mixer which reuses the gm stage of the mixer as RF and IF amplifying stage is proposed in this paper. The gm stage of the proposed mixer converts the input RF voltage into current and also amplifies the down-converted IF signal. A high-pass network and a low-pass network are used in the mixer to block the RF signal and IF signal respectively in order to guarantee frequency stability. This mixer was designed and fabricated in 65nm CMOS process. The measured IIP3 and DSB NF are −16dBm and 13.5dB respectively. A high conversion gain of 30dB is achieved with the power consumption of 3mW under a 1.2V supply voltage.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
RO201911300205632ZK.pdf | 494KB | download |