Sense amplifier driving scheme with adaptive delay line for reducing peak current and driving time variations in deep-sub-micron DRAMs

IEICE Electronics Express

Kyeong-Sik Min¹  Yong-Jin Kwon¹  Ho-Jun Song¹  O-Sam Kwon¹ 

[1] School of Electrical Engineering, Kookmin University

关键词: DRAM;    PVT variations;    sense amplifier;    sequential driving;   

DOI  :  10.1587/elex.5.472

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(4)In this letter, a simple but effective sense-amplifier driving circuit using adaptive delay line is proposed to suppress a high current peak occurring in enabling sense amplifiers at a fast Process-VDD-Temperature (PVT) condition. And, this circuit also can improve a slow enabling time of sense amplifiers at a slow PVT corner. This new circuit is verified in recent 0.18-µm DRAM technology, where the variations in the sense-amplifier enabling time and peak current are suppressed from 72% to 1% and 240% to 28%, respectively, compared with the previous sequential sense-amplifier driving circuit.

【 授权许可】

Unknown