IEICE Electronics Express | |
The effect of a low dielectric material placed at the tip of a GTEM cell on the electric field | |
Kaoru Gotoh1  Yasushi Matsumoto1  Ifong Wu1  Shinobu Ishigami1  | |
[1] EMC Group, National Institute of Information and Communications Technology | |
关键词: GTEM cell; low dielectric block; permittivity; electric field; | |
DOI : 10.1587/elex.6.1608 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(6)The effect of a low dielectric block placed at the tip of a GTEM cell on the electric field was numerically and experimentally investigated from 1-16GHz. The block increased the electric field strength when placed at the GTEM cell tip. Comparison of the simulation and measurement results revealed good agreement between them. However, we also confirmed that when the low dielectric block was installed in a location far from the GTEM cell tip, it had little influence on the electric field, regardless of its size. It is concluded that a low dielectric material increases the electric field strength when it is placed at the tip of a GTEM cell.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300182483ZK.pdf | 884KB | download |