IEICE Electronics Express | |
Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator | |
Shun-ichiro Ohmi1  Hiroshi Ishiwara1  Min Liao1  | |
[1] Department of Electronics and Applied Physics, Tokyo Institute of Technology | |
关键词: pentacene; OFETs; HfON; grain size; electrical properties; | |
DOI : 10.1587/elex.8.1461 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(15)Cited-By(4)Pentacene based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of deposition temperature and deposition rate on the grain sizes of pentacene films was investigated. It was found that the grain sizes of pentacene films increase with increasing deposition temperature and decreasing deposition rate. Due to the increase in grain size, pentacene based OFET with HfON gate insulator shows enhanced electrical properties, such as a low subthreshold swing of 0.14V/decade and a large on/off current ratio of 1.1×104. Moreover, the hole mobility of pentacene based OFET with HfON gate insulator is 0.39cm2/Vs at an operating voltage of -2V.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300128584ZK.pdf | 451KB | download |