Contact resistivity reduction for PtSi/Si(100) by dopant segregation process

IEICE Electronics Express

Shun-ichiro Ohmi¹  Jun Arima¹ 

[1] Dept. of Electronics and Applied Physics, Tokyo Institute of Technology

关键词: PtSi;    dopant segregation;    work function;    contact resistivity;   

DOI  :  10.1587/elex.10.20130778

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)Cited-By(3)Contact resistivity reduction at PtSi/Si(100) interface by dopant segregation (DS) process was investigated by the cross-bridge Kelvin resistor (CBKR) method for the first time. After the 60 nm-thick PtSi was formed at 700oC/1min in N2 ambient, ion implantation (PH3 or BF3, 1×1015cm−2, 15 keV) was carried out followed by the drive-in anneal at 800oC/1min as a DS process. The Schottky barrier height (SBH) for electron and hole obtained from the C-V characteristics of PtSi/Si(100) diodes were 0.19eV and 0.23eV, respectively. The contact resistivity of 1.7×10−7Ωcm2 for PtSi/p+-Si(100) and 1.8×10−6Ωcm2 for n+-Si(100) were achieved even for the minimum contact area of 2.2μm2 and 33μm2, respectively.

【 授权许可】

Unknown