Circuit simulation model for ultimately-scaled ballistic nanowire MOSFETs

IEICE Electronics Express

Tatsuhiro Numata²  Shigeyasu Uno¹  Kazuo Nakazato² 

[1] Department of Photonics, College of Science and Engineering, Ritsumeikan University;Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

关键词: NW MOSFET;    fully analytic and explicit model;    circuit simulation;    quantum transport;    drain-induced barrier lowering;   

DOI  :  10.1587/elex.10.20120906

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Cited-By(1)To innovate new devices such as nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs), fully analytic and explicit models become vastly more important as TCAD tools for device design and circuit simulation, but such tools have yet to be reported. In the present article, we propose a fully analytic and explicit model of ballistic and quasi-ballistic NW MOSFETs. Device properties are derived analytically in terms of one common parameter. This common parameter is obtained analytically by means of a one-of-a-kind approximation technique, which also achieves the desired fully analytic and explicit model. Finally, we demonstrate circuit simulations using the model.

【 授权许可】

Unknown