A 5�?8 GHz wideband 100 W internally matched GaN power amplifier

IEICE Electronics Express

Yanlong Zhang²  Jiaxin Zheng¹  Xiaohua Ma¹  Yang Lu²  Wenzhe Han²  Bochao Zhao²  Honghe Zhang¹  Yue Hao² 

[1] School of Advanced Materials and Nanotechnology, Xidian University;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: GaN PA;    internally matched;    wideband;    high power;   

DOI  :  10.1587/elex.12.20150172

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)Cited-By(1)A 5�?8 GHz internally matched Gallium Nitride (GaN) power amplifier (PA) with 100 W output power was realized in this letter. The theory of load line match was used and extended. Power contour was depicted and revised by the output capacitance of GaN High Electron Mobility Transistor (HEMT). Impedance was matched into the �?1 dB power contour in a wide frequency band due to the ladder transmission line matching network and broadband power combiner. With the package size of 14.5 �? 14.8 mm, the proposed power amplifier has the maximum output power of 102 W with 45.8% associate power added efficiency (PAE) at the frequency of 6.5 GHz, and output power over 85 W and PAE over 42.8% at the frequency band of 5�?8 GHz.

【 授权许可】

Unknown