On the performance characterization of silicon MOSFETs on 4° off-axis substrate

IEICE Electronics Express

Mengjiao Dang¹  You Guo¹  Guoxuan Qin¹  Tao Luo²  Hao Liu¹  Jianguo Ma¹  Zhenqiang Ma³ 

[1] School of Electronic Information Engineering, Tianjin University;School of Computer Science and Technology, Tianjin Key Laboratory of Cognitive Computing and Application, Tianjin University;Department of Electrical and Computer Engineering, University of Wisconsin-Madison

关键词: 4° off-axis;    gate length;    gate width;    MOSFETs;    mobility;    transconductance;   

DOI  :  10.1587/elex.13.20160634

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(19)Circular metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate dimensions are fabricated on 4° off-axis and regular (100) silicon substrates. The influences of substrate orientation, gate length and width on the dc performance of the MOSFETs are investigated and the underlying mechanism is discussed. The on/off ratio, threshold voltage, field effect mobility, transconductance and drain current are compared and the differences can be explained by the interface state density and the surface roughness scattering. The results provide guidelines for the optimization and reliability of the MOSFETs on the off-axis silicon wafers.

【 授权许可】

Unknown