Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure

Advanced Science

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[1] College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, Guangdong, 518071, P. R. China;Institute for Advanced Study, Shenzhen University, Shenzhen, Guangdong, 518060, P. R. China;Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Shenzhen, Guangdong, 518060, P. R. China;

关键词: graphene;    heterostructures;    homojunctions;    negative differential resistance;    titanium oxide;   

DOI  :  10.1002/advs.201900213

来源: publisher

【 授权许可】

Unknown