Thermoelectric Microsensor Based on Ultrathin Si Films

Proceedings

Lopeandía-Fernández, Aitor¹  Dalkiranis, Gustavo Gonçalves²  Ferrando-Villalba, Pablo³  Abad-Muñoz, Llibertat⁴  Rodriguez-Viejo, Javier⁵ 

[1] Author to whom correspondence should be addressed.;Grup de Nanomaterials i Microsistemes, Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain;Instituto de Microelectrónica de Barcelona—Centre Nacional de Microelectrònica, Campus UAB, Bellaterra, 08193 Barcelona, Spain;Present address: IMEC, Kapeldreef 75, 3001 Leuven, Belgium;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.

关键词: photosensor;    thermoelectric effect;    microsensor;   

DOI  :  10.3390/proceedings2131517

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

We show the use as a thermal photosensor of a thermoelectric (TE) microsensor based on ultrathin suspended Si films. The reduced thickness of the structural films enhances the extremely large thermal insulation of the sensing area (~43 µW/K), since phonons scatter in the surfaces, and guarantees a reduced thermal mass (in the µJ/K range). The sensitivity of the device is evaluated by heating with an argon laser (λ = 457 nm) in the range 0–10 mW, reaching sensitivities of around 6 × 108 V/(W·m2) in high vacuum conditions and 5 × 107 V/(W·m2) in environments of air at atmospheric pressure. Open circuit voltage measurements with and without light illumination with a 406 nm diode laser operating at 4 mW were conducted at temperature differences up to 50 K between the central hot region and the Si frame. The slight decrease of the Seebeck coefficient is related to the increase of carriers by photogeneration.

【 授权许可】

CC BY