Proceedings | |
Silicon-On-Nothing IR-Emitter for Gas Sensing Applications | |
Fischer, Wolf-Joachim1  Komenko, Vladislav2  Kravchenko, Andrey3  | |
[1] Author to whom correspondence should be addressed.;Infineon Technologies Dresden GmbH, 01099 Dresden, Germany;Institute of Semiconductors and Microsystems, TU Dresden, 01187 Dresden, Germany | |
关键词: MEMS; CMOS; Silicon-On-Nothing; IR-Emitter; gas sensing; thermal stability; | |
DOI : 10.3390/proceedings2131080 | |
学科分类:社会科学、人文和艺术(综合) | |
来源: mdpi | |
【 摘 要 】
Within the current work, we present a miniaturized IR-Emitter based on Silicon-On-Nothing (SON) technology capable of producing 10 ms pulses. Transition to monocrystalline silicon, as the material choice for the filament, is governed by improved reliability and greater thermal stability as opposed to polycrystalline silicon alternative, commonly used in such class of devices. Compact design, low-cost processing and exceptional filament material properties make the presented device a favorite solution for integrated gas sensing applications. Numerical modeling and measurements of the IR-Emitter are performed to investigate the heating dynamics and assess the structureâs behavior at extreme temperatures as well as confirm the target performance. Additionally, a part of the work is dedicated to cover the insight of used fabrication process and the discussion of further improvements.
【 授权许可】
CC BY
【 预 览 】
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RO201910258237705ZK.pdf | 1740KB | download |