Experiment on Ka-band amplifiers degraded and damaged by electromagnetic waves

The Journal of Engineering

Xu Xiong¹  Zhan-Liang Wang²  Jinjin Luo³ 

[1] School of Electronics Science and Engineering, University Electronic Science and Technology of China (UESTC) , No. 4, Section 2, North Jianshe Road, Chengdu , People'State Key Laboratory of Complex Electromagnetic Environment Effects of Electronics and Information System , Luoyang 471003 , People's Republic of China

关键词: Ka-b;    amplifiers;    pulse wave;    injected power level;    electromagnetic waves;    high-power microwave;    uncharged amplifiers;    anti-radiation design;    HMMC5040 chip;    charged amplifiers;    continuous wave;   

DOI  :  10.1049/joe.2018.0098

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

Research on amplifiers injected by high-power microwave is important and lays foundation for reinforce technology. This study reports an experiment on Ka-band amplifiers injected and damaged by electromagnetic waves. The continuous wave and the pulse wave are injected into the amplifiers which are based on HMMC5040 chips. The injected power level increases until the amplifiers are damaged. The results are recorded and analysed. The results show that: (i) the uncharged amplifiers need more injected power to be damaged compared with the charged amplifiers. (ii) To degrade or damage the amplifiers, the pulse wave need more power. (iii) The first node of the HMMC5040 chip is damaged in the experiment, so this is the key part for anti-radiation design.

【 授权许可】

CC BY