Fabrication of organic light-emitting diode using molybdenum trioxide interlayer between electrode and organic interface

Bulletin of Materials Science

DHRUBAJYOTI SAIKIA^1¹ 

[1] Thin Film Laboratory, Department of Physics, J.B. College, Jorhat 785001, India^1

关键词: Hole-injection layer;    OLED;    surface resistance;    optical transmittance;    FESEM.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In this study, high-performance of organic light-emitting diodes (OLEDs) with a buffer layer of MoO$_3$ is demonstrated. With an optimal thickness of MoO$_3$ (12 nm), the luminance efficiency is found to be increased compared to the single layer anode OLED. To study the influence of MoO3 buffer layer on OLED performance, we deposited MoO$_3$ films with different thicknesses on the fluorine-doped tin oxide (FTO) surface and studied J–V and L–V characteristics of the OLED devices. Also, further analysis was carried out by measuring sheet resistance, optical transmittance and surface morphology with the FESEM images. Here, we found that MoO3 (12 nm) buffer layer is a good choice to increase the efficiency of FTO-based OLED devices within the tunnelling region. Here, the maximum value of current efficiency is6.15 cd A$^{−1}$.

【 授权许可】

CC BY