H2S and NH3 Detection with Langmuir-Schaefer Monolayer Organic Field-Effect Transistors

Proceedings

Vasiliev, Alexey¹  Borshchev, Oleg²  Sizov, Alexey³  Chekusova, Victoria⁴  Agina, Elena⁵  Trul, Askold⁶ 

[1] Author to whom correspondence should be addressed.;Department of Chemistry Leninskie, Moscow State University, Gory 1–3, 119991 Moscow, Russia;Enikolopov Institute of Synthetic Polymeric Materials of the Russian Academy of Sciences Profsoyuznaya, st. 70, 117393 Moscow, Russia;NRC Kurchatov Institute, Kurchatov Complex of Physical and Chemical Technologies, Akademika Kurchatova pl. 1, 123182 Moscow, Russia;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018;Printed Electronics Technologies LLC, Profsoyuznaya st.70, Office 410, 117393 Moscow, Russia

关键词: chemical sensing;    OFETs;    monolayer;    Langmuir-Schaefer;    organic electronics;   

DOI  :  10.3390/proceedings2130935

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

In this work gas sensing properties of Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) have been investigated. The monolayer has been deposited using Langmuir-Schaefer method, which results in a uniform low-defect monolayer with excellent electrical performance, hole mobility up to 7 × 10−2 cm2 V−1 s−1, the threshold voltage around 0 V and on-off ratio of 104. Developed sensors demonstrate a long-term stability of a half-year storage under ambient conditions. Preliminary investigations demonstrated that the LS OFETs give instantaneous response on ammonia and hydrogen sulfide at low concentrations. The results reported open new perspectives for the OFET-based gas-sensing technology.

【 授权许可】

CC BY