Enhancement of Gas Sensing Response on WO3 Thin Films Processed by Direct Laser Interference Patterning

Proceedings

Olaizola, Santiago M.¹  Parellada-Monreal, Laura²  Martínez-Calderón, Miguel³  Zonta, Giulia⁴  Castro-Hurtado, Irene⁵ 

[1] Author to whom correspondence should be addressed.;Ceit-IK4 and Tecnun, University of Navarra, 20018 San Sebastián-Donostia, Spain;Department of Physics and Earth Science, University of Ferrara, 44122 Ferrara, Italy;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018;SCENT, S. r. l, 44122 Ferrara, Italy

关键词: WO3;    thin film;    Direct Laser Interference Patterning;    NO2;   

DOI  :  10.3390/proceedings2130813

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

Direct Laser Interference Patterning (DLIP) technique has been used to generate a line pattern on the surface of WO3 thin films, due to the interference of two coherent laser beams, modifying its surface morphology and physical properties. Gas sensing devices based on WO3 thin films annealed at 600 °C and nanostructured by DLIP have been fabricated and compared to samples simply annealed at the same temperature. The sensors processed by DLIP present a great enhancement on the response in NO2 atmospheres indicating possible modifications on the composition, aside from the morphological one.

【 授权许可】

CC BY