Fabrication and characterization of transparent nanocrystalline ZnO thin film transistors by a sol–gel technique

Bulletin of Materials Science

R N GAYEN^2¹  S R BHATTACHARYYA^1² 

[1] Department of Physics, Presidency University, Kolkata 700073, India^2;Department of Physics, Suri Vidyasagar College, Suri, Birbhum 731101, India^1

关键词: Zinc oxide;    sol–gel;    thin film transistor;    optical;    electrical.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

A nanocrystalline zinc oxide (ZnO) thin film-based metal–insulator–semiconductor thin film transistor (MISTFT) was fabricated by a facile sol–gel technique onto silicon di-oxide/indium tin oxide-coated glass substrates. Themicrostructural study of the ZnO thin films indicated uniform crystalline growth with typical (002) X-ray diffraction peaks for h-ZnO with a wurtzite structure. The optical transmittance of the ZnO thin films was >80% in the visible region of theelectromagnetic spectrum. The field effect transistor (FET) aluminium top contacts were fabricated using suitable shadow masking. The transfer characteristics of a typical ZnO MIS FET revealed nonlinearity in a linear plot. From the slope and crossover, we obtained a first estimate of field effect mobility ($\mu$) and threshold voltage ($V_T$) of 0.13 cm$^2$ V$^{−1}$ s$^{−1}$ and1.03 eV, respectively. The ZnO TFT operated in enhanced mode with n-channel characteristics and the drain current on–off ratio was 105. The deposition parameter needs to be optimized to obtain TFTs with a higher modulation ratio and larger field-effect mobility.

【 授权许可】

CC BY