Low-level NO gas sensing properties of Zn$_{1−x}$Sn$_x$O nanostructure sensors under UV light irradiation at room temperature

Bulletin of Materials Science

ALI ORKUN ÇAG IRTEKIN^1¹  TUGBA CORLU^1²  IRMAK KARADUMAN ER^1³ 

[1] Department of Electric and Electronics Engineering, Engineering Faculty, Erzincan University, Erzincan 25050, Turkey^2;Department of Material Engineering, Engineering and Natural Sciences Faculty, Yıldırım Beyazıt University, Ankara 06500, Turkey^3;Department of Physics, Science Faculty, Gazi University, Ankara 06500, Turkey^1

关键词: Gas sensor;    UV light irradiation;    Sn-doped ZnO nanostructures.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Zn$_{1−x}$Sn$_x$O ($x = 0$, 0.05, 0.10, 0.15, 0.20) nanostructures have been grown through the successive ionic layer adsorption and reaction method. The structural, morphological and compositional properties of the nanostructures have been characterized through X-ray diffraction, scanning electron microscope and energy dispersive X-ray analysis, respectively. The NO gas sensing properties of sensors to 20 ppb have been systematically investigated in the dark and under UV light irradiation. A Zn$_{0.90}$Sn$_{0.10}$O sensor has exhibited the highest response for 20 ppb NO gas compared with other sensors. The sensor response has increased from 1.9 to 43% depending on the UV light irradiation for the Zn$_{0.90}$Sn$_{0.10}$O sensor. Zn$_{0.90}$Sn$_{0.10}$O nanostructure can be used as a suitable gas sensor material for detection of low concentration levels of NO gas.

【 授权许可】

CC BY