Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Nanoscale Research Letters

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[1] grid.263817.9, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 518055, Shenzhen, People’s Republic of China;grid.263817.9, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, 518055, Shenzhen, People’s Republic of China;0000 0001 2331 6153, grid.49470.3e, School of Power and Mechanical Engineering, Wuhan University, 430000, Wuhan, People’s Republic of China;

关键词: 6H-SiC;    Anisotropy;    Deformation;    Machinability;   

DOI  :  10.1186/s11671-019-3123-7

来源: publisher

【 摘 要 】

As an important third-generation semiconductor material, the micro-deformation and removal mechanism of 6H-SiC at the atomic scale are vital for obtaining ultra-smooth and damage-free surface with atomic steps. Due to the difficulties in directly observing the surface/subsurface of nanomachining region by current experimental means, molecular dynamics method is used to study the atomic-scale details in nanomachining process, such as dislocation slip motion, phase transition, and material separation mechanism. The influence of crystallography-induced anisotropy on the slip deformation and nanometric machinability of 6H-SiC is emphatically investigated. This study contributes significantly to the understanding of micro-deformation and nanomachining process of 6H-SiC.

【 授权许可】

CC BY