Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

Nanoscale Research Letters

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[1] 0000 0001 0125 2443, grid.8547.e, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 200433, Shanghai, China;0000 0004 1761 2484, grid.33763.32, Frontier Science Center for Synthetic Biology and Key Laboratory of Systems Bioengineering (MOE), and School of Chemical Engineering and Technology, Tianjin University, 300072, Tianjin, China;

关键词: Atomic layer deposition;    Low-temperature process;    Flexible electronics;    Synaptic plasticity;   

DOI  :  10.1186/s11671-019-2933-y

来源: publisher

【 摘 要 】

Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems.

【 授权许可】

CC BY