Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

Nanoscale Research Letters

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[1] 0000 0004 0369 0529, grid.411077.4, School of Science, Minzu University of China, 100081, Beijing, China;0000 0004 0369 0529, grid.411077.4, School of Science, Minzu University of China, 100081, Beijing, China;0000000119573309, grid.9227.e, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China;0000000119573309, grid.9227.e, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China;0000 0004 1797 8419, grid.410726.6, Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China;grid.443651.1, School of Physics and Optoelectronic Engineering, Ludong University, 264025, Yantai, China;

关键词: Single-photon avalanche photodiodes;    Theoretical analysis;    Simulation;    Tunneling effect;   

DOI  :  10.1186/s11671-018-2827-4

来源: publisher

【 摘 要 】

Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.

【 授权许可】

CC BY