Equivalent circuit model of through-silicon-via in slow wave mode

IEICE Electronics Express

Gang Wang¹  Fengjuan Wang¹  Ningmei Yu¹ 

[1] School of Automation and Information Engineering, Xi’an University of Technology

关键词: slow wave mode;    through-silicon-via (TSV);    equivalent circuit model;   

DOI  :  10.1587/elex.14.20171025

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

The equivalent circuit of signal-ground through-silicon-via (GS-TSV) in slow wave region is developed based on the microwave theory, and is verified by employing ANSYS HFSS. The ADS results of the equivalent circuit of GS-TSV consistent well with the HFSS simulation data. The results of slow-wave equivalent circuit are more accurate than those of widely used quasi-transverse electric and magnetic (TEM) equivalent circuit in slow wave region.

【 授权许可】

CC BY