Research on hard-drive circuit simulation model of Dual-GCT

IEICE Electronics Express

Cailin Wang¹  Yang Song² 

[1] Xi’an Shiyou University;Xi’an University of Technology

关键词: Dual-GCT;    hard-drive simulation circuit model;    dynamic characteristics;    model parameters;   

DOI  :  10.1587/elex.15.20180101

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this paper, based on the operation principle and structural features of the Dual Gate Commutated Thyristor (Dual-GCT), a hard-drive simulation circuit model is presented. Dual-GCT is integrated by GCT-A and GCT-B. The Proposed model consists of two Double-M-2T-3R units in parallel which can be used to characterize the Dual-GCT’s switching characteristics and internal commutation mechanism. Then the key model parameters are extracted and the test circuit is established in PSPICE software, and the current and voltage waveform during switching are simulated. The accuracy of the model is verified by comparison of the simulation waveform with the measurement waveform.

【 授权许可】

CC BY