A 0.18-µm CMOS time-domain capacitive-sensor interface for sub-1mG MEMS accelerometers

IEICE Electronics Express

Katsuyuki Machida¹  Daisuke Yamane²  Toshifumi Konishi²  Shiro Dosho²  Motohiro Takayasu²  Hiroyuki Ito²  Kazuya Masu²  Noboru Ishihara² 

[1] NTT Advanced Technology Co.;Tokyo Institute of Technology

关键词: time domain;    capacitive-sensor interface;    relaxation oscillator;    sub-1mG;    microelectromechanical systems (MEMS);    accelerometer;   

DOI  :  10.1587/elex.15.20171227

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A high-resolution capacitive-sensor interface for sub-1mG MEMS accelerometers is presented herein. A time-domain capacitive-sensor interface based on a relaxation oscillator with noise reduction is proposed to achieve a high resolution. A prototype interface is fabricated using a 0.18-µm CMOS process. The prototype is linked with a sub-1mG MEMS accelerometer, and its performance is investigated experimentally. The results confirm that the proposed interface is able to detect sub-1mG acceleration with a signal-to-noise ratio of 90.3 dB (an acceleration noise-floor of 9.0 µG/√Hz with a bandwidth of 12 Hz).

【 授权许可】

CC BY