Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

IEICE Electronics Express

Lihua Dai¹  Zhiyuan Hu¹  Xiaoyun Li¹  Shichang Zou¹  Zhengxuan Zhang² 

[1] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;University of Chinese Academy of Sciences

关键词: total dose radiation;    silicon-on-insulator;    low-frequency noise;    floating body effects;   

DOI  :  10.1587/elex.15.20171236

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this paper, the impacts of total dose radiation on the low-frequency noise and gate induced floating body effects (GIFBEs) for the 130 nm partially depleted silicon-on-insulator N-type metal-oxide semiconductors transistor with an ultrathin gate oxide have been investigated. It is shown that the second transconductance gm peak becomes smaller after irradiation when the Lorentzian-like excess noise is more pronounced. The traps induced by irradiation at shallow trench isolation/body and buried-oxide/body interface can act as the recombination centers to increase the source-body diode current, which results in the changes in the excess noise and GIFBEs.

【 授权许可】

CC BY