Nanocrystalline silicon prepared at high growth rate using helium dilution

Bulletin of Materials Science

关键词: Nanocrystalline silicon;    helium dilution;    wide optical gap;    RF glow discharge.;   

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Growth and optimization of the nanocrystalline silicon (nc-Si : H) films have been studied by varying the electrical power applied to the helium diluted silane plasma in RF glow discharge. Wide optical gap and conducting intrinsic nanocrystalline silicon network of controlled crystalline volume fraction and oriented crystallographic lattice planes have been obtained at a reasonably high growth rate from helium diluted silane plasma, without using hydrogen. Improving crystallinity in the network comprising ∼ 10 nm Si-nanocrystallites and contributing optical gap widening, conductivity ascending and that obtained during simultaneous escalation of the deposition rate, promises significant technological impact.

【 授权许可】

CC BY