Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2)

Archives of Metallurgy and Materials

L.V. Piskach¹  A.A. Albassam¹  K. Oźga²  M. Szota³  I.V. Kityk⁴  O.V. Zamurueva⁵  G.L. Myronchuk⁵  A.M. El-Naggar⁶  O.V. Parasyuk⁶ 

[1] ASTRONOMY DEPT., COLLEGE OF SCIENCE, KING SAUD UNIVERSITY, P.0.BOX 2455, RIYADH 11451, SAUDI ARABIA;CZESTOCHOWA UNIVERSITY OF TECHNOLOGY, INSTITUTE OF ELECTRONIC AND CONTROL SYSTEM, 17 ARMII KRAJOWEJ AV., 42-200 CZESTOCHOWA, POLAND;CZESTOCHOWA UNIVERSITY OF TECHNOLOGY, INSTITUTE OF MATERIAL SCIENCE ENGINEERING, 19 ARMII KRAJOWEJ AV., 42-200 CZESTOCHOWA, POLAND;EASTERN EUROPEAN NATIONAL UNIVERSITY, DEPARTMENT OF INORGANIC AND ORGANIC CHEMISTRY, , 13 VOLI AVE., 43025 LUTSK, UKRAINE;EASTERN EUROPEAN NATIONAL UNIVERSITY, DEPARTMENT OF SOLID STATE PHYSICS, 13 VOLI AVE., 43025 LUTSK, UKRAINE;RESEARCH CHAIR OF EXPLOITATION OF RENEWABLE ENERGY APPLICATIONS IN SAUDI ARABIA, PHYSICS &

关键词: Keywords: Tl1−xIn1−xGexSe2 single crystal;    chalcogenide crystals;    transport features;    photoinduced birefringence;    electroconductivity mechanisms;    Urbach rule;   

DOI  :  10.1515/amm-2015-0343

学科分类：金属与冶金

来源: Akademia Gorniczo-Hutnicza im. Stanislawa Staszica / University of Mining and Metallurgy

【 摘 要 】

Temperature dependences of electroconductivity for single crystals Tl1−xIn1−xGexSe2 were analyzed. It was established an occurrence of thermoactivated states within the temperature range 100-300 K. The conductivity is formed by delocalized carriers within the conductivity band and the jumping conductivity over the localized states which are situated in the narrow localized states near the Fermi level. Following the performed data the activation energy was evaluated with accuracy up to 0.02 eV. The density of the localized states as well as the distribution of the energy over the mentioned states was evaluated. Additionally the average distance between the localized states is evaluated at different temperatures.

【 授权许可】

Unknown