Highly sensitive 10 Gb/s PAM-4 optical receiver circuit for three-dimensional optoelectronic integration

The Journal of Engineering

Horst Zimmermann¹  Dinka Milovančev¹  Nemanja Vokić¹  Bernhard Goll¹ 

[1] Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, Gusshausstrasse 25/E354, Vienna 1040, Austria

关键词: voltage-input signal;    power 145 mW;    bit error rate;    test-chip;    three-dimensional optoelectronic integration;    bipolar complementary metal-oxide-semiconductor receiver circuit;    highly sensitive PAM-4 optical receiver circuit;    SiGe;    bit rate 10 Gbit/s;    series resistor;    photonic-electronic three-dimensional integration;    photodetector responsivity;   

DOI  :  10.1049/joe.2016.0242

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

This study presents a 0.35 µm silicon germanium bipolar complementary metal-oxide-semiconductor 10 Gb/s receiver circuit optimised for photonic–electronic three-dimensional integration. Measurements were conducted on a test-chip with a voltage-input signal, which was converted to a current via a series resistor. On the basis of measurement results and using the expected value of the photodetector responsivity of 1 A/W, the PAM-4 circuit consumes 145 mW, sensitivity is −21.8 dBm at 10 Gb/s, and at a bit error rate = 10−9.

【 授权许可】

CC BY