Calculating area of fractional-order memristor pinched hysteresis loop

The Journal of Engineering

Hui-Yan Kang²  Ya-Juan Yu³  Min Shi⁴  Bo-Cheng Bao⁴ 

[1] Institute of Advanced Technology, Nanjing University of Posts and Telecommunications, Nanjing 210016, People'School of Information Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, People'School of Mathematics and Physics, Changzhou University, Changzhou 213164, Jiangsu, People's Republic of China

关键词: memristor part memory;    fractional-order derivative;    fractional-order current-controlled memristor;    Fourier series;    sine component;    closed loop;    voltage sine harmonic;    cosine component;    pinched hysteresis loop area;    instantaneous power;   

DOI  :  10.1049/joe.2015.0154

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

A fractional-order current-controlled memristor pinched hysteresis loop area is calculated in this study. The area is divided into two parts: one equals to the half of instantaneous power and the other is the part memory of the memristor. Moreover, two parts of the area are affected not only by the cosine components, but also by the sine components. The voltage of the fractional-order current-controlled memristor is no longer an odd function with respect to time and the coefficient of cos(ωt) in its Fourier series is zero. In a closed loop, the average power and the memory rely only on sine harmonics of the voltage. Meanwhile, the power and the memory are related to the order of the fractional-order derivative.

【 授权许可】

CC BY