Early Stage of Sb Ultra-Thin Film Growth: Crystal Structure and Electron Band Structure

Condensed Matter

Stróżak, Mirosław¹ 

关键词: topological insulator;    antimony;    ultrathin films;    RHEED;    angle-resolved photoemission spectroscopy (ARPES);    surface conductivity;   

DOI  :  10.3390/condmat1010011

学科分类：凝聚态物理

来源: mdpi

【 摘 要 】

The evolution of the electron band structure upon the reduction of Sb film on a Si(111)-(6 × 6)Au substrate, relevant to topological insulator properties, is experimentally systematically investigated by the reflection high-energy electron diffraction (RHEED), in situ surface electron transport and angular resolved photoemission spectroscopy methods. The experiments reveal that a bilayer (BL) of Sb is crystalline but the subsequent three BLs on top of it form amorphous layers. The five-BL-thick film transforms back to the crystalline form. The bilayer as well as 1.2- and 3.8-BL-thick films show the electron band structure with a relatively large energy gap at the Γ point of the Brillouin zone. The theoretically predicted band structure is observed at 4.8 BL coverage.

【 授权许可】

CC BY