Computer-aided design-based circuit model of microstrip line for terahertz interconnects technology

The Journal of Engineering

关键词: full-wave EM simulator;    computer-aided design-based circuit model;    MDL;    modified dielectric loss;    modified conductor loss;    circuit simulator;    VLSI-ULSI technology;    aluminium;    characteristic impedance models;    microstrip transmission line;    terahertz interconnects technology;    tungsten-silicide conductors;    modified characteristic impedance;   

DOI  :  10.1049/joe.2017.0078

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

In this study, presented a computer-aided design-based circuit model which is applicable to microstrip transmission line for terahertz interconnects technology in circuit simulator. Comparison of modified Kirschning and Jansen for dispersion and modified characteristic impedance for characteristic impedance models with full-wave electromagnetic (EM) simulator are investigated which shows < 1% deviation for w/h range 0.1 ≤ w/h ≤ 100, conductor thickness 0.001 ≤ t/h ≤ 0.2, wavelength range 8.7 μm ≤ λg ≤ 8.7 m and substrate permittivity 1.0 ≤ ɛ r ≤ 200. Modified conductor loss for conductor loss and modified dielectric loss (MDL) for dielectric loss are also investigated and compared with EM simulator, which shows deviation of < 1 dB for above said electrical and physical sets of range of parameters. Calculation of line parameters: (f, t), (f, α), R(f), L(f), C(f), G(f) by using the effect of dispersion, characteristic impedance and losses which shows < 1% deviation with experimental data available. Accuracy of the circuit model are also verified for interconnects made by aluminium (σ o = 3.7 × 107 S/m), tungsten (σ o = 1.0 × 107 S/m) and tungsten–silicide (σ o = 3.3 × 106 S/m) conductors which used in very large scale integration/ultra large scale integration (VLSI/ULSI) technology.

【 授权许可】

CC BY