Comparison of low field electron transport characteristics in Ge and Si semiconductors and effects of neutron energy deposition on their crystal structure

International Journal of Physical Sciences

H. Arabshahi¹ 

关键词: Minority electrons;    ionized imurity scattering;    neutron energy;    atom displacement.;   

DOI  :  10.5897/IJPS11.008

学科分类：物理（综合）

来源: Academic Journals

【 摘 要 】

The transport of minority electrons up to 600 K temperature in silicon and germanium have been investigated, using an iterative approach. Theoretical expressions for electron scattering which take into account the ellipsoidal nature of the conduction band valleys have been incorporated into the model. Minority electron mobility calculations compared favorably with experimental results. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The amount of neutron energy deposition in Si and Ge crystal of different sizes and at different distances from a neutron source has also been evaluated by using MCNP code. Then, the rate of atoms displacement in the crystals has been calculated using NRT Model. The damage to crystal is proportional to the energy deposition of neutron directly. Results show that the number of atoms displacement in the crystal is related to the neutron radiation damage and increased by enlarging of crystal size.

【 授权许可】

CC BY