Comparison of electron-plasmon scattering effect on low-field electron mobility in ZnO and SiC

African Journal of Mathematics and Computer Science Research

H. Arabshahi¹ 

关键词: Electron-plasmon;    relaxation-time;    Boltzmann equation;    non-parabolicity;    degeneracy.;   

DOI  :  

学科分类：计算机科学（综合）

来源: Academic Journals

【 摘 要 】

Iterative technique is used to solve Boltzmann transport equation for calculating temperature and doping dependencies of electron mobility in ZnO and SiC materials. The two-mode nature of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, ionized impurity and electron-plasmon scattering. Band non-parabolicity, admixture ofpfunctions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. It is shown that electron-plasmon scattering affects substantially the low-field electron mobility in bulk ZnO and SiC. It is found that the electron mobility decreases monotonically as the temperature increases from 300 - 600 K. The low temperature value of electron mobility increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.

【 授权许可】

CC BY