Structural properties of binary semiconductors

International Journal of Physical Sciences

D. S. Yadav¹ 

关键词: Plasmon energy;    structural properties;    III-V and II-VI Semiconductors.;   

DOI  :  10.5897/IJPS12.476

学科分类：物理（综合）

来源: Academic Journals

【 摘 要 】

Using the plasma oscillations theory of solids, 2 empirical relations have been proposed for the calculation of the structural properties such as bond-stretching central force constant (α) and bond-bending non-central force constant (β) for II-VI and III-V group binary semiconductors. We find that α =D (ћωp)2and β = S (ћωp)2, where D and S are constants. The numerical values ofDandSare respectively, 0.151 and 0.016 for II-VI and 0.177 and 0.031 for III-V group binary semiconductors. The structural properties of binary semiconductors exhibit a linear relationship when plotted on a log-log scale against the plasmon energyћωp(in eV), which lies on the straight lines. We have applied the proposed empirical relations on these binary semiconductors and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers.

【 授权许可】

CC BY