International Journal of Physical Sciences | |
Structural properties of binary semiconductors | |
D. S. Yadav1  | |
关键词: Plasmon energy; structural properties; III-V and II-VI Semiconductors.; | |
DOI : 10.5897/IJPS12.476 | |
学科分类:物理(综合) | |
来源: Academic Journals | |
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【 摘 要 】
Using the plasma oscillations theory of solids, 2 empirical relations have been proposed for the calculation of the structural properties such as bond-stretching central force constant (α) and bond-bending non-central force constant (β) for II-VI and III-V group binary semiconductors. We find that α =D (ћωp)2and β = S (ћωp)2, where D and S are constants. The numerical values ofDandSare respectively, 0.151 and 0.016 for II-VI and 0.177 and 0.031 for III-V group binary semiconductors. The structural properties of binary semiconductors exhibit a linear relationship when plotted on a log-log scale against the plasmon energyћωp(in eV), which lies on the straight lines. We have applied the proposed empirical relations on these binary semiconductors and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers.
【 授权许可】
CC BY
【 预 览 】
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