Ultra-small Form-Factor Helix on Pad-Type Stage-Bypass WCDMA Tx Power Amplifier Using a Chip-Stacking Technique and a Multilayer Substrate

ETRI Journal

关键词: stage-bypass PA;    small form-factor;    multilayer substrate;    HoP-iPD;    efficiency;    Chip-stacking;   

Others  :  1185972
DOI  :  10.4218/etrij.10.0209.0486

【 摘 要 】

A fully integrated small form-factor HBT power amplifier (PA) was developed for UMTS Tx applications. For practical use, the PA was implemented with a well configured bottom dimension, and a CMOS control IC was added to enable/disable the HBT PA. By using helix-on-pad integrated passive device output matching, a chip-stacking technique in the assembly of the CMOS IC, and embedding of the bulky inductive lines in a multilayer substrate, the module size was greatly reduced to 2 mm × 2.2 mm. A stage-bypass technique was used to enhance the efficiency of the PA. The PA showed a low idle current of about 20 mA and a PAE of about15% at an output power of 16 dBm, while showing good linearity over the entire operating power range.

   

【 参考文献 】

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