期刊论文详细信息
Advances in Materials Science and Engineering
Anisotropic Ferro- and Dielectric Properties of TexturedBi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination
Research Article
Xiaobing Chen1  Hui Sun1  Wei Wang1  XiangyuMao1 
[1] College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China, yzu.edu.cn
Others  :  1266463
DOI  :  10.1155/2010/398590
 received in 2010-07-03, accepted in 2010-10-13,  发布年份 2010
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【 摘 要 】

The grain-oriented Bi4Ti3O12 (BIT) samples were prepared by the solid-state reaction method with a multicalcination process. The grain-oriented BIT samples exhibit anisotropic structural, ferroelectric, piezoelectric, and dielectric properties. The remanent polarization (2Pr) and the piezoelectric constant (d33) of a/b- and c-direction BIT ceramics are 49.5 μC cm−2, 22.2 pC N−1 and 6.7 μC cm−2 6.9 pC N−1, respectively. The dielectric anomalies of samples are observed around 157 K and 232 K. The dielectric anomalies at around 157 K are related to oxygen vacancies. The activation energy of the dielectric relaxation of this anomaly is estimated to be 1.36 eV. Another dielectric anomaly at around 232 K is related to polarizable domains and the viscous motion of domain walls.

【 授权许可】

CC BY   
Copyright © 2010 XiangyuMao et al. 2010

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【 参考文献 】
  • [1]E. C. Subbarao. (1961). Ferroelectricity in and its solid solutions. Physical Review.122(3):804-807. DOI: 10.1103/PhysRev.122.804.
  • [2]S. E. Cummins, L. E. Cross. (1967). Crystal symmetry, optical properties, and ferroelectric polarization of single crystals. Applied Physics Letters.10(1):14-16. DOI: 10.1103/PhysRev.122.804.
  • [3]A. Fouskova, L. E. Cross. (1970). Dielectric properties of bismuth titanate. Journal of Applied Physics.41(7):2834-2838. DOI: 10.1103/PhysRev.122.804.
  • [4]S. E. Cummins, L. E. Cross. (1968). Electrical and optical properties of ferroelectric single crystals. Journal of Applied Physics.39(5):2268-2274. DOI: 10.1103/PhysRev.122.804.
  • [5]Z. S. Macedo, A. C. Hernandes. (2002). Laser sintering of ferroelectric ceramics. Materials Letters.55(4):217-220. DOI: 10.1103/PhysRev.122.804.
  • [6]M. Alexe, J. F. Scott, C. Curran, N. D. Zakharov. et al.(1998). Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications. Applied Physics Letters.73(11):1592-1594. DOI: 10.1103/PhysRev.122.804.
  • [7]B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh. et al.(1999). Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature.401(6754):682-684. DOI: 10.1103/PhysRev.122.804.
  • [8]Y. Kan, X. Jin, P. Wang, Y. Li. et al.(2003). Anisotropic grain growth of in molten salt fluxes. Materials Research Bulletin.38(4):567-576. DOI: 10.1103/PhysRev.122.804.
  • [9]T. Takeuchi, T. Tani, Y. Saito. (1999). Piezoelectric properties of bismuth layer-structured ferroelectric ceramics with a preferred orientation processed by the reactive templated grain growth method. Japanese Journal of Applied Physics.38(9 B):5553-5556. DOI: 10.1103/PhysRev.122.804.
  • [10]J. Hao, X. Wang, R. Chen, Z. Gui. et al.(2004). Preparation of textured bismuth titanate ceramics using spark plasma sintering. Journal of the American Ceramic Society.87(7):1404-1406. DOI: 10.1103/PhysRev.122.804.
  • [11]W. Chen, Y. Hotta, T. Tamura, K. Miwa. et al.(2006). Effect of suction force and starting powders on microstructure of ceramics prepared by magnetic alignment via slip casting. Scripta Materialia.54(12):2063-2068. DOI: 10.1103/PhysRev.122.804.
  • [12]H. S. Shulman, D. Damjanovic, N. Setter. (2000). Niobium doping and dielectric anomalies in bismuth titanate. Journal of the American Ceramic Society.83(3):528-532. DOI: 10.1103/PhysRev.122.804.
  • [13]X. Y. Mao, J. H. He, J. Zhu, X. B. Chen. et al.(2006). Structural, ferroelectric, and dielectric properties of vanadium-doped. Journal of Applied Physics.100(4)-5. DOI: 10.1103/PhysRev.122.804.
  • [14]W. Li, K. Chen, Y. Yao, J. Zhu. et al.(2004). Correlation among oxygen vacancies in bismuth titanate ferroelectric ceramics. Applied Physics Letters.85(20):4717-4719. DOI: 10.1103/PhysRev.122.804.
  • [15]J. Zhai, H. Chen. (2003). Ferroelectric properties of thin films grown on the highly oriented buffered Pt/Ti//Si substrates. Applied Physics Letters.82(3):442-444. DOI: 10.1103/PhysRev.122.804.
  • [16]Z. Shen, J. Liu, J. Grins, M. Nygren. et al.(2005). Effective grain alignment in ceramics by superplastic-deformation-induced directional dynamic ripening. Advanced Materials.17(6):676-680. DOI: 10.1103/PhysRev.122.804.
  • [17]A. Garg, Z. H. Barber, M. Dawber, J. F. Scott. et al.(2003). Orientation dependence of ferroelectric properties of pulsed-laser-ablated films. Applied Physics Letters.83(12):2414-2416. DOI: 10.1103/PhysRev.122.804.
  • [18]E. C. Subbarao. (1962). A family of ferroelectric bismuth compounds. Journal of Physics and Chemistry of Solids.23(6):665-676. DOI: 10.1103/PhysRev.122.804.
  • [19]E. Sawaguchi, L. E. Cross. (1970). Dielectric behavior of at low temperature. Materials Research Bulletin.5(2):147-152. DOI: 10.1103/PhysRev.122.804.
  • [20]K. R. Chakraborty, S. N. Achary, S. J. Patwe, P. S. R. Krishna. et al.(2007). Low temperature neutron diffraction studies on. Ceramics International.33(4):601-604. DOI: 10.1103/PhysRev.122.804.
  • [21]M. Kuwabara, K. Goda, K. Oshima. (1990). Coexistence of normal and diffuse ferroelectric-paraelectric phase transitions in (Pb,La) ceramics. Physical Review B.42(16):10012-10015. DOI: 10.1103/PhysRev.122.804.
  • [22]Z.-Y. Wang, T.-G. Chen. (1998). Evidence for the weak domain wall pinning due to oxygen vacancies in from internal friction measurements. Physica Status Solidi A.167(1):R3-R4. DOI: 10.1103/PhysRev.122.804.
  • [23]A. E. Paladino. (1965). Oxidation kinetics of sing-crystal. Journal of the American Ceramic Society.48(9):476-478. DOI: 10.1103/PhysRev.122.804.
  • [24]N. Zhong, T. Shiosaki. (2006). Dielectric behavior of ferroelectric film. Journal of Applied Physics.100(3). DOI: 10.1103/PhysRev.122.804.
  • [25]X. B. Chen, C. H. Li, Y. Ding, Z. F. Zhang. et al.(2000). Dielectric relaxation and internal friction related to the mobility of domain wall in PZT ferroelectrics. Physica Status Solidi A.179(2):455-461. DOI: 10.1103/PhysRev.122.804.
  • [26]C. Wang, Q. F. Fang, Y. Shi, Z. G. Zhu. et al.(2001). Internal friction study on oxygen vacancies and domain walls in Pb(Zr,Ti) ceramics. Materials Research Bulletin.36(15):2657-2665. DOI: 10.1103/PhysRev.122.804.
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