Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions

ETRI Journal

关键词: multigate;    power MOSFET;    TDMOS;    RSO process;    Superjunction (SJ);   

Others  :  1196663
DOI  :  10.4218/etrij.13.0112.0246

【 摘 要 】

In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage (BV_DS) and on-state current (I_D,MAX), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer (SiO₂) of a conventional RSO power MOSFET is changed to a multilayered insulator (SiO₂/SiN_x/TEOS). The inserted SiN_x layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as BV_DS and I_D,MAX, simulation studies are performed on the function of the gate configurations and their bias conditions. BV_DS and I_D,MAX are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This I_D,MAX variation indicates the specific on-resistance modulation.

   

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