期刊论文详细信息
ETRI Journal | |
Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions | |
关键词: self-consistent subband calculation; Many-body effect; Spontaneous polarization; Piezoelectric polarization; Two-dimensional electron gas; Single Heterojunction; AlGaN/GaN; | |
Others : 1184533 DOI : 10.4218/etrij.02.0102.0402 |
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【 摘 要 】
We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the H
【 授权许可】
【 预 览 】
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【 参考文献 】
- [1]S. Strite and H. Morkoc, "GaN, AlN, and InN: a Review," J. Vac. Sci. Technol. B, vol. 10, no. 4, 1992, pp. 1237-1266.
- [2]U.V. Bhapkar and M.S. Shur, "Monte Carlo Calculation of Velocity-Field Characteristics of Wurtizite GaN," J. Appl. Phys., vol. 82, no. 4, 1997, pp. 1649-1655.
- [3]S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981, pp. 99-108.
- [4]V.W.L. Chin, T.L. Tansley, and T. Osotchan, "Electron Mobilities in Gallium, Indium, and Aluminum Nitrides," J. Appl. Phys., vol. 75, no. 11, 1994, pp. 7365-7372.
- [5]Y.F. Wu, D. Kapolnek, J.P. Ibbetson, P. Parikh, B.P. Keller, and U.K. Mishra, "14-W GaN-Based Microwave Power Amplifiers," 2000 IEEE MTT-S Int’l Microwave Symp., Boston, MA, June, 2000, Piscataway, NJ [2000 IEEE MTT-S Int’l Microwave Symposium Digest, p
- [6]J.J. Xu, S. Keller, G. Parish, S. Heikman, U.K. Mishra, and R.A. York, "A 3-10-GHz GaN-Based Flip-Chip Integrated Broad-Band Power Amplifier," IEEE Trans. Microwave Theory and Tech., vol. 48, no. 12, 2000, pp. 2573-2578.
- [7]M. Asif Khan, A. Bhattarai, J.N. Kuznia, and D.T. Olson, "High Electron Mobility Transistor Based on a GaN-AlxGa1-xN Heterojunction," Appl. Phys. Lett., vol. 63, no. 9, 1993, pp. 1214-1215.
- [8]F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous Polarization and Piezoelectric Constants of III-V Nitrides," Phys. Rev. B, vol. 56, no. 15, 1997, pp. R10024-R10027.
- [9]G. Bastard, "Superlattice Band Structure in the Envelope-Function Approximation," Phys. Rev B, vol. 24, no. 10, 1981, pp. 5693-569.
- [10]B.-W. Kim, Y.I. Jun, and H.B. Jung, "Envelope-Function Equation and Motion of Wave Packet in a Semiconductor Superlattice Structure, ETRI J., vol. 21, no. 1, 1999, pp. 1-27; B.-W. Kim, J.-H. Yoo, and S.H. Kim, "An Improved Calculation Model for Analysis o
- [11]F. Stern and S.D. Sarma, "Electron Energy Levels in GaAs-Ga1-x AlxAs Heterojunctions," Phys. Rev. B, vol. 30, no. 2, 1984, pp. 840-848.
- [12]K.-S. Lee and E.-H. Lee, "Theoretical Investigations of the Effect of a Magnetic Field on the Landau-Level Structure of a Modulation-Doped Single Heterojunction Having Two Occupied Subbands," Phys. Rev. B, vol. 51, no. 19, 1995, pp. 13315-13319; K.-S. Lee
- [13]Y. Zhang and J. Singh, "Charge Control and Mobility Studies for an AlGaN/GaN High Electron Mobility Transistor," J. Appl. Phys., vol. 85, no. 1, 1999, pp. 587-594.
- [14]O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-face AlGaN
- [15]F. Sacconi, A.D. Carlo, P. Lugli, and H. Morkoc, "Spontaneous and Piezoelectric Polarization Effects on the Output Characteristics of AlGaN/GaN Heterojunction Modulation Doped FETs," IEEE Trans. Elec. Devices, vol. 48, no. 3, 2000, pp. 450-457.
- [16]W.G. Cady, Piezoelectricity, Dover, New York, 1964, Chap. VIII.; C. Shi, P.M. Asbeck, and E.T. Yu, "Piezoelectric Polarization Associated with Dislocations in Wurtzite GaN," Appl. Phys. Lett., vol. 74, no. 4, 1999, pp. 573-575.
- [17]J.H. Edgar, Properties of Group III Nitrides, INSPEC, London 1994, Chap. 1.
- [18]R.B. Schwarz, K. Khachaturyan, and E.R. Weber, "Elastic Moduli of Gallium Nitride," Appl. Phys. Lett., vol. 70, no. 9, 1997, pp. 1122-1124.
- [19]J.G. Gualtieri, J.A. Kosinski, and A. Ballato, "Piezoelectric Materials for Acoustic Wave Applications," IEEE Trans. Ultrasonics, Ferroelectrics, and Freq. Control, vol. 41, no. 1, 1994, pp. 53-59.
- [20]A.D. Bykhovsky, B.L. Gelmont, and M.S. Shur, "Elastic Strain Relaxation and Piezoeffect in GaN-AlN, GaN-AlGaN, and GaN-InGaN Superlattices," J. Appl. Phys., vol. 81, no. 9, 1997, pp. 6332-6338.
- [21]J.A. Majewski, M. Staedele, and P. Vogl, "Electronic Structure of Biaxially Strained Wurtzite Crystals GaN and AlN," Mater. Res. Soc. Proc., vol. 449, Pittsburgh, PA, 1997, pp. 887-892.
- [22]S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981, pp. 22-27.
- [23]J. Neugebauer and C. Van de Walle, "Atomic Geometry and Electronic Structure of Native Defects in GaN," Phys. Rev. B, vol. 50, no. 11, 1994, pp. 8067-8070.
- [24]C.H. Park and D.J. Chadi, "Stability of Deep Donor and Acceptor Centers in GaN, AlN, and BN," Phys. Rev. B, vol. 55, no. 19, 1997, pp. 12995-13001.
- [25]B.K. Ridley, "Polarization-Induced Electron Populations," Appl. Phys. Lett., vol. 77, no. 7, 2000, pp. 990-992.
- [26]S.N. Mohammad and H. Morkoc, "Progress and Prospects of Group-III Nitride Semiconductors," Progress Quantum Electronics, vol. 20, no. 5/6, 1996, pp. 361-525.
- [27]L. Hedin and B.I. Lundqvist, "Explicit Local Exchange-Correlation Potentials," J. Phys. C, vol. 4, 1971, pp. 2064-2083.
- [28]R. Gaska, J.W. Yang, A. Osinsky, Q. Chen, M. Asif Khan, A.O. Orlov, G.L. Snider, and M.S. Shur, "Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates," Appl. Phys. Lett., vol. 72, no. 6, 1998, pp. 707-709.
- [29]L.W. Wong, S.J. Cai, R. Li, K. Wang, H.W. Jiang, and M. Chen, "Magnetotransport Study on the Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures," Appl. Phys. Lett., vol. 73, no. 10, 1998, pp. 1391-1393.
- [30]A. Saxler, P. Debray, R. Perrin, S. Elhamri, W.C. Mitchel, C.R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, and J.S. Speck, "Characterization of an AlGaN/GaN Two-Dimensional Ele
- [31]Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S. Denbaars, U.K. Mishra, and J. Singh, "Charge Control and Mobility in AlGaN/GaN Transistors: Experimental and Theoretical Studies," J. Appl. Phys., vol. 87, no. 11, 2000, pp. 7981-7987.