Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit

ETRI Journal

关键词: threshold voltage;    temperature;    supply voltage;    power amplifier;    MMIC;    pHEMT;    Ku-band;    driver amplifier;    compensation;    Bias circuit;   

Others  :  1185807
DOI  :  10.4218/etrij.09.0108.0704

【 摘 要 】

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 m GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power- added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

   

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