Highly Linear and Efficient Microwave GaN HEMT Doherty Amplifier for WCDMA

ETRI Journal

关键词: wideband code division multiple access (WCDMA);    gallium nitride (GaN);    efficiency;    Doherty amplifier;   

Others  :  1185727
DOI  :  10.4218/etrij.08.0207.0181

【 摘 要 】

A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one-carrier WCDMA results show an adjacent channel leakage ratio of -43.2 dBc at ±2.5-MHz offset with a power added efficiency of 40.1% at an average output power of 37 dBm, which is a 7.5 dB back-off power from the saturated output power.

   

【 参考文献 】

• [1]M. Maekawa, T. Nagahara, T. Yamamoto, and S. Sano,"A 100 W High-Efficiency GaN HEMT Amplifier for S-Band Wireless System,"Proc. EuMC, vol. 3, 2005, pp. 1205-1208.
• [2]Y.S. Lee and Y.H. Jeong,"Applications of GaN HEMTs and SiC MESFETs in High Efficiency Class-E Power Amplifier Design for WCDMA Applications,"IEEE MTT-S IMS, 2007, pp. 1099-1102.
• [3]D.R. Webster, G. Ataei, A.E. Parker, and D.G. Haigh,"Low-Distortion MMIC Power Amplifier Using a New Form of Derivative Superposition,"IEEE Tans. Microwave Theory & Tech., vol. 49, no. 2, Feb. 2001, pp. 328-332.
• [4]P.M. Cabral, J.C. Pedro, and N.B. Carvalho,"Nonlinear Device Model of Microwave Power GaN HEMTs for High Power-Amplifier Design,"IEEE Trans. Microwave Theory & Tech., vol. 52, no. 11, Jan. 2005, pp. 2585-2592.
• [5]H.I. Pan and G.A. Rincon-Mora,"Asynchronous Nonlinear Power-Tracking Supply for Power Efficient Linear RF PAs,"Proc. ICCCAS, 2006, pp. 2531-2535.