Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-Si3N4 Mixed Target

ETRI Journal

关键词: mixed target;    SiCN;    PLD;   

Others  :  1185153
DOI  :  10.4218/etrij.04.0103.0054

【 摘 要 】

We grew amorphous SiCN films by pulsed laserdeposition using mixed targets. The targets were fabricatedby compacting a mixture of SiC and Si₃N₄ powders. We controlled the film stoichiometry by varying the mixingratio of the target and the target-to-substrate distance. Themixing ratio of the target had a dominant effect on the filmcomposition. We consider the structures of the SiCN filmsdeposited using 30 ~ 70 wt.% SiC in the target to be anintermediate phase of SiC and SiN_x. This provides thepossibility of growing homogeneous SiCN films with amixed target at a moderate target-to-substrate distance.

   

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