A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers

ETRI Journal

关键词: tuner;    low-IF;    mobile TV;    DAB;    T-DMB;    Band-III;    subthreshold;    CMOS;   

Others  :  1186036
DOI  :  10.4218/etrij.11.0211.0055

【 摘 要 】

This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-μm CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply.

   

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