期刊论文详细信息
| Active and Passive Electronic Components | |
| Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing | |
| A. Bouhdada1 R. Marrakh1 | |
| [1]Laboratoire de Physique des Matériaux et de Microélectronique, Université Hassan II, Faculté des Sciences Aïn Chok, Km8 | |
| [2] Route d'El Jadida, BP 5366 Maârif–Casablanca, , Morocco, univcasa.ma | |
| 关键词: Aging; Hot-carrier; Stress; Defects; -MOSFET; | |
| Others : 1369514 DOI : 10.1155/APEC.23.137 |
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| received in 2000-03-09, accepted in 2000-04-25, 发布年份 2000 | |
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【 授权许可】
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