Corrosion at the Grain Boundary and a Fluorine-Related Passivation Layer on Etched Al-Cu (1%) Alloy Surfaces

ETRI Journal

关键词: passivation;    fluorine-related compounds;    SF6 treatment;    corrosion;    dry etch;    Al-Cu;   

Others  :  1184227
DOI  :  10.4218/etrij.99.0199.0303

【 摘 要 】

After etching Al-Cu alloy films using SiCl4/Cl2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studie

   

【 参考文献 】

• [1]W. Y. Lee, J. M. Eldridge, and G. C. Schwartz, "Reactive Ion Etching Induced Corrosion of Al and Al-Cu Films," J. Appl. Phys., Vol. 52(4), 1981, pp. 2994?2999.
• [2]A. R. Sethuraman, J.-F. Wang, and L. M. Cook, "Review of Planarization and Reliability Aspects of Future Interconnect Materials," J. Elctronic. Materials, Vol. 25, 1996, pp. 1617?22.
• [3]T. Nogami and T. Nemoto, "Cu Behaviors Induced by Aging and their Effects on Electromigration Resistance on Al-Cu Lines," Proceedings of AIP Conference, 1996, pp. 198?213.
• [4]Y. Horiike, T. Yamazaki, M. Shibagaki, and T. Kurisaki, "Aluminum Reactive Ion Etching Employing CCl4+Cl2 Mixtures," Jpn. J. Appl. Phys., Vol. 21, 1982, pp. 1412?1420.
• [5]N. Hayasaka, Y. Koga, K. Shimomura, Y. Yoshida, and H. Okano, "Mechanism of Corrosion in Al-Si-Cu," Jpn. J. Appl. Phys., Vol. 30, 1991, pp. 1571?1575.
• [6]T. Ishida, N. Fujiwara, M. Yoneda, K. Nakamoto, and K. Horie, "Mechanism for AlSiCu Alloy Corrosion," Jpn. J. Appl. Phys., Vol. 31, 1992, pp. 2045?2048.
• [7]J.-S. Maa, H. Gossenberger, and R. J. Paff, "Effect of Post-etch Treatment on Chlorine Concentration of AlSi and Ti-capped AlSi Films," J. Vac. Sci. Technol., B8(5), 1990, pp. 1052?1057.
• [8]K.-I. Siozawa, N. Fujiwara, H. Miyatake, and M. Yoneda, "Mechanism of AlCu Corrosion," Jpn. J. Appl. Phys., Vol. 36, 1997, pp. 2496 ? 2501.
• [9]D. M. Manos and D. L. Flamm, Plasma Etching, Academic Press, 1989.
• [10]M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, John Wiley & Sons, 1994.
• [11]K. H. Baek, Y. S. Yoon, J. M. Park, K. H. Kwon, C. I. Kim, and K. S. Nam, "A Fluorine-Related Passivation Layer on the Etched Al-Cu (1 %) Alloy Surface after the SF6 Plasma Treatments," Materials Letters, Vol. 35, 1998, pp. 183?187.
• [12]K. H. Baek, C. I. Kim, K. H. Kwon, T. H. Kim, E. G. Chang, S. J. Yun, Y. S. Yoon, S. G. Kim, and K. S. Nam, "Passivation Role of Fluorine on the Anticorrosion of AlCu Films after Plasma Etching," J. Vac. Science and Technology A, Vol. 16(3), Part II, 19
• [13]K. H. Kwon, S. J. Yun, C. I. Kim, J. M. Park, K. H. Baek, Y. S. Yoon, S. G. Kim, and K. S. Nam, "The Effects of Fluorine Passivation Using SF6 Plasma on the Corrosion of Al(Cu 1 %) at Grain Boundaries," J. Electrochem. Soc., Vol. 45(3), 1998, pp. 1044?1
• [14]Y. S. Yoon, K. H. Baek, J. M. Park, K. H. Kwon, C. I. Kim, and I. G. Hwang, "Angle Resolved XPS Investigation of the Fluorine-Related Passivation Layer on the Etched Al-Cu (1 %) Surface after the SF6 Treatments," J. Korean Physical Soc., Vol. 34, No. 6?