期刊论文详细信息
ETRI Journal
Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications
关键词: XG-PON1;    GPON;    monolithic amplifier IC;    Burst-mode receiver;   
Others  :  1185781
DOI  :  10.4218/etrij.09.0209.0227
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【 摘 要 】

This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 μm SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.

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【 参考文献 】
  • [1]IEEE 802.3av Task Force, http://www.ieee802.org/3/av/.
  • [2]FSAN NG-PON Task Group, http://www.fsanweb.org/ ngpon.asp.
  • [3]K. Hara et al., "1.25/10.3 Gbit/s Dual-Rate Burst-Mode Receiver," Electron. Lett., vol. 44, no. 14, July 2008, pp. 869 -870.
  • [4]S. Nishihara et al., "10.3 Gbit/s Burst-Mode PIN-TIA Module with High Sensitivity, Wide Dynamic Range and Quick Response," Electron. Lett., vol. 44, no. 3, Jan. 2008, pp. 222-223.
  • [5]ITU-T Std. G.984.2, Gigabit-Capable Passive Optical Networks (GPON), ITU-T, Mar. 2003.
  • [6]Q. Le et al., "2.5Gb/s GPON Single-Chip Burst-Mode Receiver," Proc. ECOC, vol. 5, Sept. 2008, p. 119-120.
  • [7]M. Nakamura et al., "1.25-Gb/s Burst-Mode Receiver ICs with Quick Response for PON Systems," IEEE J. Solid-State Circuits, vol. 40, no. 12, Dec. 2005, pp. 2680-2688.
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