期刊论文详细信息
ETRI Journal
Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors
关键词: solvent;    dielectric;    OFET;    Inkjet-printing;   
Others  :  1186022
DOI  :  10.4218/etrij.11.0111.0321
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【 摘 要 】

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.

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【 参考文献 】
  • [1]H. Sirringhaus, "Device Physics of Solution-Processed Organic Field-Effect Transistors," Adv. Mater., vol. 17, no. 20, Oct. 2005, pp. 2411-2425.
  • [2]Y.-Y. Noh et al., "Downscaling of Self-Aligned, All-Printed Polymer Thin-Film Transistors," Nat. Nanotech., vol. 2, no. 12, Nov. 2007, pp. 784-789.
  • [3]G.H. Gelinck et al., "Flexible Active-Matrix Displays and Shift Registers Based on Solution-Processed Organic Transistors," Nat. Mater., vol. 3, Jan. 2004, pp. 106-110.
  • [4]K. Sanderson, "Display of Flexibility," Nature, vol. 445, Jan. 2007, P. 473.
  • [5]T. Sekitani et al., "Stretchable Active-Matrix Organic Light-Emitting Diode Display Using Printable Elastic Conductors," Nat. Mater., vol. 8, May 2009, pp. 494-499.
  • [6]E. Cantatore et al., "A 13.56-MHz RFID System Based on Organic Transponders," IEEE J. Solid-State Circuits, vol. 42, no. 12, Dec. 2007, pp. 84-92.
  • [7]Y.-Y. Noh et al., "High-Photosensitivity p-Channel Organic Phototransistors Based on a Biphenyl End-Capped Fused Bithiophene Oligomer," Appl. Phys. Lett., vol. 86, no. 4, Jan. 2005, 043501:1-3.
  • [8]K.-J. Baeg et al., "Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret," Adv. Mater., vol. 18, no. 23, Dec. 2006, pp. 3179-3183.
  • [9]K.-J. Baeg et al., "Polarity Effects of Polymer Gate Electrets on Non-Volatile Organic Field-Effect Transistor Memory,"Adv. Funct. Mater., vol. 18, no. 22, Nov. 2008, pp. 3678-3685.
  • [10]K.-J. Baeg et al., "Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory," Adv. Funct. Mater., vol. 20, no. 2, Jan. 2010, pp. 224-230.
  • [11]B.S. Ong et al., "High-Performance Semiconducting Polythiophenes for Organic Thin-Film Transistors," J. Am. Chem. Soc. vol. 126, no. 11, Mar. 2004, pp. 3378-3379.
  • [12]I. McCulloch et al., "Liquid-Crystalline Semiconducting Polymers with High Charge-Carrier Mobility," Nat. Mater., vol. 5, Mar. 2006, pp. 328-333.
  • [13]H. Yan et al., "A High-Mobility Electron-Transporting Polymer for Printed Transistors," Nature, vol. 457, Jan. 2009, pp. 679-686.
  • [14]C.D. Dimitrakopoulos et al., "Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators," Adv. Mater., vol. 11, no. 16, Nov. 1999, pp. 1372-1375.
  • [15]L.L. Chua et al., "General Observation of n-Type Field-Effect Behaviour in Organic Semiconductors," Nature, vol. 434, Mar. 2005, pp. 194-199.
  • [16]M.-H. Yoon et al., "Gate Dielectric Chemical Structure-Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors," J. Am. Chem. Soc., vol. 128, no. 39, Oct. 2006, pp. 12851-12869.
  • [17]H. Sirringhaus et al., "High-Resolution Inkjet Printing of All-Polymer Transistor Circuits," Sci., vol. 290, no. 5499, Dec. 2000, pp. 2123-2126.
  • [18]Y.-Y. Noh and H. Sirringhaus, "Ultra-thin Polymer Gate Dielectrics for Top-Gate Polymer Field-Effect Transistors," Org. Electron., vol. 10, no. 1, Feb. 2009, pp. 174-180.
  • [19]S.M. Sze et al., Physics of Semiconductor Devices, 3rd ed., New York: Wiley-Interscience, 2007.
  • [20]R.D. Deegan et al., "Capillary Flow as the Cause of Ring Stains from Dried Liquid Drops," Nature, vol. 389, Oct. 1997, pp. 827-829.
  • [21]H. Hu and R.G. Larson, "Marangoni Effect Reverses Coffee-Ring Depositions," J. Phys. Chem. B, vol. 110, no. 14, Apr. 2006, pp. 7090-7094.
  • [22]E. Tekin et al., "Controlled Pattern Formation of Poly[2-Methoxy-5-(2′-Ethylhexyloxyl)–1,4-Phenylenevinylene] (MEH–PPV) by Ink-Jet Printing," Adv. Funct. Mater., vol. 17, no. 2, Jan. 2007, pp. 277-284.
  • [23]J.A. Lim et al., "Self-Organization of Ink-jet-Printed Triisopropylsilylethynyl Pentacene via Evaporation-Induced Flows in a Drying Droplet," Adv. Funct. Mater., vol. 18, no. 2, Jan. 2008, pp. 229-234.
  • [24]K.-J. Baeg et al., "High Speeds Complementary Integrated Circuits Fabricated with All-Printed Polymeric Semiconductors," J. Poly. Sci.: Poly. Phys., vol. 49, no. 1, Jan. 2011, pp. 62-67.
  • [25]M. Manceaua et al., "The Mechanism of Photo- and Thermooxidation of Poly(3-Hexylthiophene) (P3HT) Reconsidered," Poly. Degradation and Stability, vol. 94, no. 6, June 2009, pp. 898-907.
  • [26]K.-J. Baeg et al., "High Mobility Top-Gated Poly(3-Hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes," Thin. Sol. Films., vol. 518, no. 14, May 2010, pp. 4024-4029.
  • [27]T. Richards and H. Sirringhaus, "Analysis of the Contact Resistance in Staggered, Top-Gate Organic Field-Effect Transistors," J. Appl. Phys., vol. 102, no. 9, Nov. 2007, 094510:1-6.
  • [28]J. Veres et al., "Gate Insulators in Organic Field-Effect Transistors," Chem. Mater., vol. 16, no. 23, Sept. 2004, pp. 4543-4555.
  • [29]H. Sirringhaus et al., "Two-Dimensional Charge transport in Self-Organized, High-Mobility Conjugated Polymer," Nature, vol. 401, Oct. 1999, pp. 685-688.
  • [30]P.-Y. Lo et al., "Stable Polymer Dielectric Film for Polythiophene Thin Film Transistor on Modified Poly(vinyl phenol) with Polar Functional Group," Jpn. J. Appl. Phys., vol. 46, Apr. 2007, pp. 2714-2716.
  • [31]F.-Y. Yang et al., "High-Performance Poly(3-Hexylthiophene) Transistors with Thermally Cured and Photo-Cured PVP Gate Dielectrics," J. Mater. Chem., vol. 18, no. 48, Nov. 2008, pp. 5927-5932.
  • [32]S. Mototani et al., "Performance of Organic Field-Effect Transistors with Poly(3-Hexylthiophene) as the Semiconductor Layer and Poly(4-vinylphenol) Thin Film Untreated and Treated by Hexamethyldisilazane as the Gate Insulator," Jpn. J. Appl. Phys., vol.
  • [33]S. Kobayashi et al., "Control of Carrier Density by Self-Assembled Monolayers in Organic Field-Effect Transistors," Nat. Mater., vol. 3, Apr. 2004, pp. 317-322.
  • [34]V. Podzorov and M.E. Gershenson, "Photoinduced Charge Transfer across the Interface between Organic Molecular Crystals and Polymers," Phys. Rev. Lett., 2005, vol. 95, 016602:1-4.
  • [35]Y.-Y. Noh et al., "Highly Sensitive Thin-Film Organic Phototransistors: Effect of Wavelength of Light Source on Device Performance," J. Appl. Phys., vol. 98, Oct. 2005, 074505:1-7.
  • [36]K.C. Dickey et al., "Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene," Adv. Mater. vol. 18, no. 13, July 2006, pp. 1721-1726.
  • [37]K.-H. Yim et al., "Controlling Electrical Properties of Conjugated Polymers via a Solution-Based p-Type Doping," Adv. Mater., vol. 20, no. 17, Sept. 2008, pp. 3319-3324.
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